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STPSC40G12 数据表(PDF) 4 Page - STMicroelectronics |
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STPSC40G12 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() 1.1 Characteristics (curves) Figure 3. Forward voltage drop versus forward current (typical values) 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IF(A) VF(V) Pulse test : tp=380 µs Ta=25 °C Ta=100 °C Ta=150 °C Ta=175 °C Figure 4. Reverse leakage current versus reverse voltage applied (typical values) 1.E-2 1.E-1 1.E+0 1.E+1 1.E+2 1.E+3 100 200 300 400 500 600 700 800 900 1000 1100 1200 IR(µA) VR(V) Tj=25 °C Tj=100 °C Tj=150 °C Tj=175 °C Figure 5. Peak forward current versus case temperature 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 IM(A) TC(°C) δ=0.1 δ=0.3 δ=0.5 δ=1 δ=0.7 Figure 6. Junction capacitance versus reverse voltage applied (typical values) 0 500 1000 1500 2000 2500 3000 0.1 1.0 10.0 100.0 1000.0 10000.0 Cj (pF) VR(V) F=1 MHz VOSC=30 mVRMS Tj=25 °C Figure 7. Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 Zth(j-c)/Rth(j-c) tp(s) Single pulse Figure 8. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+2 1.E+3 1.E+4 1.E-5 1.E-4 1.E-3 1.E-2 IFSM(A) tp(s) Ta=25 °C Ta=150 °C STPSC40G12 Characteristics (curves) DS14116 - Rev 1 page 4/10 |
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