ABSOLUTE MAXIMUM RATINGS

(1)

DISSIPATION RATINGS

TPS734xx

SBVS089F – DECEMBER 2007 – REVISED FEBRUARY 2009 ........................................................................................................................................ www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION(1)

PRODUCT

VOUT

(2)

TPS734xxyyyz

XX is nominal output voltage (for example, 28 = 2.8V, 285 = 2.85V, 01 = Adjustable).

YYY is package designator.

Z is package quantity.

(1)

For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI

website at www.ti.com.

(2)

Output voltages from 1.0V to 3.6V in 50mV increments are available through the use of innovative factory EEPROM programming;

minimum order quantities may apply. Contact factory for details and availability.

Over operating temperature range (unless otherwise noted).

PARAMETER

TPS734xx

UNIT

VIN range

–0.3 to +7.0

V

VEN range

–0.3 to VIN +0.3

V

VOUT range

–0.3 to VIN +0.3

V

VFB range

–0.3 to VFB (TYP) +0.3

V

Peak output current

Internally limited

Continuous total power dissipation

See Dissipation Ratings Table

Junction temperature range, TJ

–55 to +150

°C

Storage junction temperature range, TSTG

–55 to +150

°C

ESD rating, HBM

2

kV

ESD rating, CDM

500

V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

DERATING FACTOR

BOARD

PACKAGE

RθJC

RθJA

ABOVE TA = +25°C

TA < +25°C

TA = +70°C

TA = +85°C

Low-K(1)

DDC

90°C/W

280°C/W

3.6mW/°C

360mW

200mW

145mW

High-K(2)

DDC

90°C/W

200°C/W

5.0mW/°C

500mW

275mW

200mW

Low-K(1)

DRV

20°C/W

140°C/W

7.1mW/°C

715mW

395mW

285mW

High-K(2)

DRV

20°C/W

65°C/W

15.4mW/°C

1.54W

845mW

615mW

(1)

The JEDEC low-K (1s) board used to derive this data was a 3in × 3in (7,62cm × 7,62cm), two-layer board with 2-ounce (56,699g)

copper traces on top of the board.

(2)

The JEDEC high-K (2s2p) board used to derive this data was a 3in × 3in (7,62cm × 7,62cm), multilayer board with 1-ounce (28,35g)

internal power and ground planes and 2-ounce (56,699g) copper traces on top and bottom of the board

2

Submit Documentation Feedback

Copyright © 2007–2009, Texas Instruments Incorporated