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TS3USB221EDRCR.B 数据表(PDF) 4 Page - Texas Instruments

部件名 TS3USB221EDRCR.B
功能描述  TS3USB221E High-Speed USB 2.0 (480Mbps) 1:2 MultiplexerDemultiplexer Switch With Single Enable and IEC Level 3 ESD Protection
PDF  29 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

TS3USB221EDRCR.B 数据表(HTML) 4 Page - Texas Instruments

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5 Specifications
5.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VCC
Supply voltage
–0.5
4.6
V
VIN
Control input voltage(2) (2) (3)
–0.5
7
V
VI/O
Switch I/O voltage(2) (3) (4)
–0.5
7
V
IIK
Control input clamp current
VIN < 0
–50
mA
II/OK
I/O port clamp current
VI/O < 0
–50
mA
II/O
ON-state switch current(5)
±120
mA
Continuous current through VCC or GND
±100
mA
θJA
Package thermal impedance(6)
DRC package
48.7
°C/W
RSE package
243
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to ground, unless otherwise specified.
(3)
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(4)
VI and VO are used to denote specific conditions for VI/O.
(5)
II and IO are used to denote specific conditions for II/O.
(6)
The package thermal impedance is calculated in accordance with JESD 51-7.
5.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/
ESDA/JEDEC JS-001(1)
I/O pins to GND
±12000
V
Pins GND, OE, S and VCC
±7000
Contact discharge (IEC 61000-4-2)
I/O pins to GND
±7000
Charged-device model (CDM), per JEDEC specification JESD-002(2)
±1000
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Recommended Operating Conditions
See (1).
MIN
MAX
UNIT
VCC
Supply voltage
2.3
3.6
V
VIH
High-level control input voltages
VCC = 2.3 V to 2.7 V
0.46 × VCC
V
VCC = 2.7 V to 3.6 V
0.46 × VCC
VIL
Low-level control input voltage
VCC = 2.3 V to 2.7 V
0.25 × VCC
V
VCC = 2.7 V to 3.6 V
0.25 × VCC
VI/O
Data input/output voltage(2)
0
5.5
V
TA
Operating free-air temperature
–40
85
°C
(1)
All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the Implications of
Slow or Floating CMOS Inputs application note.
(2)
The I/O pins are 5.5V tolerant and functional for the entire range. However, for VI/O >3.6V, channel RON will be high. Use 3.3V power
supply for best results.
TS3USB221E
SCDS263E – SEPTEMBER 2009 – REVISED JULY 2024
www.ti.com
4
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Copyright © 2024 Texas Instruments Incorporated
Product Folder Links: TS3USB221E



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