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TS3USB221EDRCR.B 数据表(PDF) 4 Page - Texas Instruments |
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TS3USB221EDRCR.B 数据表(HTML) 4 Page - Texas Instruments |
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4 / 29 page ![]() 5 Specifications 5.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT VCC Supply voltage –0.5 4.6 V VIN Control input voltage(2) (2) (3) –0.5 7 V VI/O Switch I/O voltage(2) (3) (4) –0.5 7 V IIK Control input clamp current VIN < 0 –50 mA II/OK I/O port clamp current VI/O < 0 –50 mA II/O ON-state switch current(5) ±120 mA Continuous current through VCC or GND ±100 mA θJA Package thermal impedance(6) DRC package 48.7 °C/W RSE package 243 Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to ground, unless otherwise specified. (3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (4) VI and VO are used to denote specific conditions for VI/O. (5) II and IO are used to denote specific conditions for II/O. (6) The package thermal impedance is calculated in accordance with JESD 51-7. 5.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ ESDA/JEDEC JS-001(1) I/O pins to GND ±12000 V Pins GND, OE, S and VCC ±7000 Contact discharge (IEC 61000-4-2) I/O pins to GND ±7000 Charged-device model (CDM), per JEDEC specification JESD-002(2) ±1000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 5.3 Recommended Operating Conditions See (1). MIN MAX UNIT VCC Supply voltage 2.3 3.6 V VIH High-level control input voltages VCC = 2.3 V to 2.7 V 0.46 × VCC V VCC = 2.7 V to 3.6 V 0.46 × VCC VIL Low-level control input voltage VCC = 2.3 V to 2.7 V 0.25 × VCC V VCC = 2.7 V to 3.6 V 0.25 × VCC VI/O Data input/output voltage(2) 0 5.5 V TA Operating free-air temperature –40 85 °C (1) All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the Implications of Slow or Floating CMOS Inputs application note. (2) The I/O pins are 5.5V tolerant and functional for the entire range. However, for VI/O >3.6V, channel RON will be high. Use 3.3V power supply for best results. TS3USB221E SCDS263E – SEPTEMBER 2009 – REVISED JULY 2024 www.ti.com 4 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated Product Folder Links: TS3USB221E |
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