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TS3USB221EDRCR.B 数据表(PDF) 1 Page - Texas Instruments |
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TS3USB221EDRCR.B 数据表(HTML) 1 Page - Texas Instruments |
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1 / 29 page ![]() TS3USB221E High-Speed USB 2.0 (480Mbps) 1:2 Multiplexer – Demultiplexer Switch With Single Enable and IEC Level 3 ESD Protection 1 Features • VCC operation of 2.3V to 3.6V • Switch I/OS accept signals up to 5.5V • 1.8V compatible control-pin inputs • Low-power mode when OE is disabled (1μA) • rON = 6Ω maximum • ΔrON = 0.2Ω typical • CIO(ON) = 7pf maximum • Low power consumption (30μA maximum) • ESD performance tested: – 7000V human body model per JEDEC JS-001 – 1000V charged-device model per JEDEC JS-002 • ESD performance I/O port to GND: – 12kV human body model (JEDEC JS-001) – ±7kV contact discharge (IEC 61000-4-2) • High bandwidth (1GHz typical) 2 Applications • Routes signals for USB 1.0, 1.1, and 2.0 • Mobile phones • Digital cameras • Notebooks • USB I/O expansion • MHL 1.0 3 Description The TS3USB221E is a high-bandwidth switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1GHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. The TS3USB221E is designed for low bit-to- bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480Mbps). The TS3USB221E integrates ESD protection cells on all pins, is available in a SON package (3mm × 3mm) as well as in a tiny μQFN package (2mm × 1.5mm) and is characterized over the free-air temperature range from –40°C to 85°C. Package Information PART NUMBER PACKAGE(1) PACKAGE SIZE(2) TS3USB221E DRC (VSON, 10) 3mm × 3mm RSE (UQFN, 10) 2mm × 1.5mm (1) For all available packages, see the orderable addendum at the end of the data sheet. (2) The package size (length × width) is a nominal value and includes pins, where applicable. D− D+ 1D− 1D+ 2D− 2D+ S OE Digital Control Block Diagram A EN (see Note A) B Charge Pump VCC A. EN is the internal enable signal applied to the switch. Simplified Schematic, Each FET Switch (SW) TS3USB221E SCDS263E – SEPTEMBER 2009 – REVISED JULY 2024 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
类似零件编号 - TS3USB221EDRCR.B |
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类似说明 - TS3USB221EDRCR.B |
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