IRF820 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	IRF820

功能描述	N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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IRF820

N - CHANNEL 500V - 2.5

Ω - 2.5 A - TO-220

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 2.5

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

®

INTERNAL SCHEMATIC DIAGRAM

August 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

500

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

500

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C2.5

A

ID

Drain Current (continuous) at Tc =100

oC1.6

A

IDM(

•)

Drain Current (pulsed)

10

A

Ptot

Tot al Dissipation at Tc =25

oC80

W

Derating F act or

0.64

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

3.5

V/ ns

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤2.5 A, di/dt ≤ 50 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

TYPE

VDSS

RDS(on)

ID

IRF820

500 V

< 3

Ω

2.5 A

1

2

3

TO-220

1/8

类似零件编号 - IRF820

制造商	部件名	数据表	功能描述
Motorola, Inc	IRF820	140Kb / 2P	N-CHANNEL Enhancement-Mode Silicon Gate TMOS
Samsung semiconductor	IRF820	322Kb / 6P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF820	157Kb / 5P	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
Intersil Corporation	IRF820	54Kb / 7P	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRF820	169Kb / 6P	Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

More results

类似说明 - IRF820

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