IRF820 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

Rthj-ca se

Rthj -am b

Rthc-si nk

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

1.56

62. 5

0.5

300

oC/W

oC/ W

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current, Repetitive or Not -Repet itive

(pulse width limited by Tj max)

2.5

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

210

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID =250

µAVGS =0

500

IDSS

Zero G ate Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc =125

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate Threshold

Voltage

VDS =VGS

ID =250

µA

34V

RDS(on)

St atic Drain-source On

Resistance

VGS =10V

ID = 1.5 A

2.5

Ω

ID(o n)

On St ate Drain Current

VDS >ID(on) xRDS(on)max

VGS =10 V

2. 5

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconduct ance

VDS >ID(on) xRDS(on) max

ID =1.5 A

1. 2

1.9

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse T ransfer

Capacitance

VDS =25 V

f = 1 MHz

VGS = 0

360

IRF820

2/8

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