ADA4853-1/ADA4853-2/ADA4853-3

Rev. C | Page 5 of 16

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

Rating

Supply Voltage

5.5 V

Power Dissipation

See Figure 6

resistor load is the total power consumed from the supply

minus the load power.

Common-Mode Input Voltage

Differential Input Voltage

Storage Temperature Range

−65°C to +125°C

Operating Temperature Range

6-Lead SC70

−40°C to +85°C

16-Lead LFCSP_VQ

−40°C to +105°C

14-Lead TSSOP

−40°C to +105°C

Lead Temperature

JEDEC J-STD-20

Junction Temperature

150°C

(

)

L

OUT

CURRENT

SUPPLY

VOLTAGE

SUPPLY

D

R

V

I

V

P

2

–

×

=

RMS output voltages should be considered.

In addition, more metal directly in contact with the package

Figure 6 shows the maximum safe power dissipation in the

package vs. the ambient temperature for the 6-lead SC70

(430°C/W), the 14-lead TSSOP (120°C/W), and the 16-lead

values are approximations.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

3.0

0

125

105

85

65

45

25

5

–15

–35

–55

AMBIENT TEMPERATURE (°C)

2.5

2.0

1.5

1.0

0.5

SC70

TSSOP

LFCSP

THERMAL RESISTANCE

specified for the device soldered in the circuit board for

surface-mount packages.

Table 4.

Package Type

Unit

6-Lead SC70

430

°C/W

16-Lead LFCSP_VQ

63

°C/W

14-Lead TSSOP

120

°C/W

Figure 6. Maximum Power Dissipation vs. Temperature for a 4-Layer Board

ESD CAUTION

Maximum Power Dissipation

The maximum safe power dissipation for the ADA4853-1/

ADA4853-2/ADA4853-3 is limited by the associated rise in

which is the glass transition temperature, the plastic changes its

properties. Even temporarily exceeding this temperature limit

can change the stresses that the package exerts on the die,

permanently shifting the parametric performance of the

amplifiers. Exceeding a junction temperature of 150°C for an

extended period can result in changes in silicon devices,

potentially causing degradation or loss of functionality.