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CLC5957PCASM 数据表(PDF) 3 Page - National Semiconductor (TI) |
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CLC5957PCASM 数据表(HTML) 3 Page - National Semiconductor (TI) |
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3 / 16 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Positive Supply Voltage (V CC) −0.5V to +6V Differential Voltage between any two Grounds <100 mV Analog Input Voltage Range GND to V CC Digital Input Voltage Range −0.5V to +V CC Output Short Circuit Duration (one-pin to ground) Infinite Junction Temperature (Note 7) 175˚C Storage Temperature Range −65˚C to +150˚C Lead Solder Duration (+300˚C) 10 sec. ESD tolerance human body model machine model 2000V 200V Recommended Operating Conditions Positive Supply Voltage (V CC) +5V ±5% Analog Input Voltage Range 2.048 V PP diff. Operating Temperature Range −40˚C to +85˚C Package Thermal Resistance (Note 7) Package θ JA θ JC 48-Pin TSSOP 56˚C/W 16˚C/W Reliability Information Transistor Count 5000 Converter Electrical Characteristics The following specifications apply for AV CC =DVCC = +5V, 66MSPS. Boldface limits apply for TA =Tmin = −40˚C to Tmax = +85˚C, all other limits T A = 25˚C (Note 3). Symbol Parameter Conditions Min Typ Max Units DYNAMIC PERFORMANCE BW Large-Signal Bandwidth A IN = −3 dBFS 300 MHz Overvoltage Recovery Time A IN = 1.5 FS (0.01%) 12 ns t A Effective Aperture Delay −0.41 ns t AJ Aperture Jitter 0.3 ps(rms) NOISE AND DISTORTION SNR *(Note 2) Signal-to-Noise Ratio (without 50 harmonics) f IN = 5 MHz, AIN = −1dBFS 67 dBFS f IN = 25 MHz, AIN = −1dBFS* 60 66 dBFS f IN = 75 MHz, AIN = −3dBFS 65 dBFS f IN = 150 MHz, AIN = −15dBFS 66 dBFS f IN = 250 MHz, AIN = −15dBFS 66 dBFS SFDR Spurious-Free Dynamic Range f IN = 5 MHz, AIN = −1dBFS 74 dBc f IN = 25 MHz, AIN = −1dBFS* 60 74 dBc f IN = 75 MHz, AIN = −3dBFS 72 dBc f IN = 150 MHz, AIN = −15dBFS 69 dBc f IN = 250 MHz, AIN = −15dBFS 65 dBc Spurious-Free Dynamic Range (dithered) f IN = 19 MHz, AIN = −6dBFS 85 dBFS IMD Intermodulation Distortion f IN1 = 149.84 MHz, fIN2 = 149.7 MHz, A IN = −10dBFS 68 dBFS f IN1 = 249.86 MHz, fIN2 = 249.69 MHz, A IN = −10dBFS 58 dBFS Intermodulation Distortion (dithered) f IN1 = 74 MHz, fIN2 = 75 MHz, A IN = −12dBFS 83 dBFS DC ACCURACY AND PERFORMANCE DNL Differential Non-Linearity f IN = 5MHz, AIN = −1dBFS ±0.65 LSB INL Integral Non-Linearity f IN = 5MHz, AIN = −1dBFS ±1.5 LSB Offset Error (Note 2) −30 0 30 mV Gain Error 1.2 % FS V REF Reference Voltage (Note 2) 2.2 2.37 2.6 V No Missing Codes (Note 2) f IN = 5MHz, AIN = -1dBFS Guaranteed www.national.com 3 |
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