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L6206N 数据表(PDF) 6 Page - STMicroelectronics

部件名 L6206N
功能描述  DMOS DUAL FULL BRIDGE DRIVER
PDF  23 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6206N 数据表(HTML) 6 Page - STMicroelectronics

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L6206
6/23
(6)
Tested at 25°C in a restricted range and guaranteed by characterization.
(7)
See Fig. 1.
(8)
See Fig. 2.
IIH
High Level Logic Input Current
7V Logic Input Voltage
10
µA
Vth(ON)
Turn-on Input Threshold
1.8
2.0
V
Vth(OFF)
Turn-off Input Threshold
0.8
1.3
V
Vth(HYS)
Input Threshold Hysteresis
0.25
0.5
V
Switching Characteristics
tD(on)EN
Enable to out turn ON delay time (7)
ILOAD =2.8A, Resistive Load
100
250
400
ns
tD(on)IN
Input to out turn ON delay time
ILOAD =2.8A, Resistive Load
(dead time included)
1.6
µs
tRISE
Output rise time(7)
ILOAD =2.8A, Resistive Load
40
250
ns
tD(off)EN
Enable to out turn OFF delay time (7) ILOAD =2.8A, Resistive Load
300
550
800
ns
tD(off)IN
Input to out turn OFF delay time
ILOAD =2.8A, Resistive Load
600
ns
tFALL
Output Fall Time (7)
ILOAD =2.8A, Resistive Load
40
250
ns
tdt
Dead Time Protection
0.5
1
µs
fCP
Charge pump frequency
-25°C<Tj <125°C
0.6
1
MHz
Over Current Detection
Is over
Input Supply Over Current
DetectionThreshold
-25°C<Tj <125 °C; RCL= 39 kΩ
-25°C<Tj <125 °C; RCL= 5 kΩ
-25°C<Tj <125 °C; RCL= GND
-10%
-10%
-30%
0.57
4.42
5.6
+10%
+10%
+30%
A
A
A
ROPDR
Open Drain ON Resistance
I = 4mA
40
60
tOCD(ON) OCD Turn-on Delay Time (8)
I = 4mA; CEN < 100pF
200
ns
tOCD(OFF) OCD Turn-off Delay Time (8)
I = 4mA; CEN < 100pF
100
ns
ELECTRICAL CHARACTERISTICS (continued)
(Tamb = 25 °C, Vs = 48V, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit



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