25CS160T-HSLASHMS datasheet(23/53 Pages) MICROCHIP

23 / 53 page

 2026 Microchip Technology Inc. and its subsidiaries

Preliminary

DS20007008B-page 23

25CS160

7.0

READ SEQUENCES

7.1

Reading from the EEPROM

Reading the EEPROM contents can be done whenever

the device is not in an internal write cycle, as indicated

by the Ready/Busy bit of the STATUS register. To read

the EEPROM, the CS line is pulled low to select the

device, and the READ (03h) instruction is transmitted

via the SI line, followed by the 16-bit address to be

read. Address bits A15 through A11 are “don't care” bits

because they do not fall within the addressable

memory range.

Upon completion of the 16-bit address, any data on the

SI line will be ignored. The data (D7–D0) at the

specified address are then shifted out onto the SO line.

If only one byte is to be read, the CS line should be

driven high after the data are clocked out.

The read sequence can be continued since the byte

address is automatically incremented, and data will

continue to be shifted out. When the highest address

is reached, the address counter will roll over to the

lowest address (0000h), allowing the entire memory to

be read in one continuous read cycle, regardless of

the starting address.

The read sequence can be terminated at any point in

the sequence, driving CS high.

FIGURE 7-1:

READ EEPROM (

READ) SEQUENCE

234

567

9 10 11 12

32 33

0 0 000 0 1 1

AA A

READ Opcode (03h)

Address Bits A15-A0

XX XXX A

Data Byte 1

MSb

High-Impedance

D6 D5 D4 D3 D2 D1 D0 D7 D6

825

SCK

25CS160T-H/MS 数据表(PDF) 23 Page - Microchip Technology

25CS160T-H/MS 数据表(HTML) 23 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

数据表下载