AD8061/AD8062/AD8063

Rev. E | Page 6 of 20

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter

Rating

Supply Voltage

8 V

Internal Power Dissipation1

8-lead SOIC (R)

0.8 W

5-lead SOT-23 (RJ)

0.5 W

6-lead SOT-23 (RJ)

0.5 W

8-lead MSOP (RM)

0.6 W

Input Voltage (Common-Mode)

Differential Input Voltage

Output Short-Circuit Duration

Observe power derating curves

Storage Temperature Range

R-8, RM-8, SOT-23-5, SOT-23-6

−65°C to +125°C

Operating Temperature Range

−40°C to +85°C

Lead Temperature (Soldering,

10 sec)

300°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the

AD8061/AD8062/AD8063 is limited by the associated rise in

junction temperature. The maximum safe junction temperature

for plastic encapsulated devices is determined by the glass

transition temperature of the plastic, approximately 150°C.

Temporarily exceeding this limit may cause a shift in parametric

performance due to a change in the stresses exerted on the die

by the package. Exceeding a junction temperature of 175°C for

an extended period can result in device failure. While the

AD8061/AD8062/AD8063 is internally short-circuit protected,

this may not be sufficient to guarantee that the maximum

junction temperature (150°C) is not exceeded under all

conditions.

To ensure proper operation, it is necessary to observe the

maximum power derating curves.

AMBIENT TEMPERATURE (°C)

2.0

1.0

0

–50 –40 –30

70 80 90

1.5

0.5

60

50

40

30

0

–10

–20

20

10

MSOP

SOT-23-5, SOT-23-6

8-LEAD SOIC

PACKAGE

Figure 6. Maximum Power Dissipation vs. Temperature for

AD8061/AD8062/AD8063

ESD CAUTION