Features

•

None or negligible reverse recovery charge in application current range

•

Switching behaviour independent of temperature

•

High forward surge capability

•

Operating Tj from -55 °C to +175 °C

•

ECOPACK2 compliant component

Application

•

Air conditioning equipment

•

EV Charging station

•

SMPS in telecom power

•

Solar converter

•

Telecom / Server power equipment

•

UPS power supply

Description

The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap

material allows the design of a low VF Schottky diode structure with a 650 V rating.

Thanks to the Schottky construction, no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive turn-off behavior is independent of

temperature.

Based on latest technology optimization, this diode has an improved forward surge

current capability, making it ideal for use in PFC, where this ST SiC diode boosts the

performance in hard switching conditions. Using the latest design improvement of the

“G” series of ST SiC diodes, as well as implemented tests in production, this diode is

becoming the reference point in the combination of efficiency and application.

A

K

A

K

K

TO-220AC

Product label

Product status link

STPSC4G065

Product summary

IF(AV)

4 A

VRRM

650 V

Tj(max.)

175 °C

VF(typ.)

1.30 V

650 V, 4 A high surge silicon carbide power Schottky diode

STPSC4G065

Datasheet

DS14932 - Rev 1 - March 2025

For further information, contact your local STMicroelectronics sales office.

www.st.com