1.1

Characteristics (curves)

Figure 2. Forward voltage drop versus forward current

(typical values)

0

1

2

3

4

5

6

7

8

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

IF(A)

VF(V)

Pulse test : tp=380 µs

Ta=25 °C

Ta=100 °C

Ta=150 °C

Ta=175 °C

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-3

1.E-2

1.E-1

1.E+0

1.E+1

1.E+2

100

150

200

250

300

350

400

450

500

550

600

650

IR(µA)

VR(V)

Tj=25 °C

Tj=100 °C

Tj=150 °C

Tj=175 °C

Figure 4. Peak forward current versus case temperature

(fsw > 10 kHz)

0

10

20

30

40

50

0

25

50

75

100

125

150

175

IM(A)

Tc(°C)

= 0.1

= 0.3

= 0.5

= 1

= 0.7

δ

δ

δ

δ

δ

Figure 5. Junction capacitance versus reverse voltage

applied (typical values)

0

50

100

150

200

250

300

0.1

1.0

10.0

100.0

1000.0

Cj (pF)

VR(V)

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

Figure 6. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-5

1.E-4

1.E-3

1.E-2

1.E-1

1.E+0

Zth(j-c)/Rth(j-c)

tp(s)

Single pulse

Figure 7. Non-repetitive peak surge forward current

versus pulse duration (sinusoidal waveform)

1.E+1

1.E+2

1.E+3

1.E-5

1.E-4

1.E-3

1.E-2

IFSM(A)

tp(s)

Ta = 25 °C

Ta = 150 °C

STPSC4G065

Characteristics

DS14932 - Rev 1

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