Characteristics

STPS640C

2/8

DocID3628 Rev 9

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified)

Symbol

Parameter

Value

Uni

t

VRRM

Repetitive peak reverse voltage

40

V

IF(RMS)

Forward rms current

6

A

IF(AV)

Average forward current δ = 0.5, square wave

TC = 135 °C

3

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

75

A

PARM

Repetitive peak avalanche power

tp = 10 µs

Tj = 125 °C

90

W

Tstg

Storage temperature range

-65 to +150

°C

Tj

Maximum operating junction temperature (1)

150

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

5.5

°C/W

Per device

3

Rth(c)

Coupling

0.5

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

100

µA

Tj = 125 °C

-

2

10

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 3 A

-

0.63

V

Tj = 125 °C

-

0.50

0.57

Tj = 25 °C

IF = 6 A

-

0.84

Tj = 125 °C

-

0.67

0.72

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.42 x IF(AV) + 0.050 x IF2(RMS)