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STPS640C 数据表(PDF) 3 Page - STMicroelectronics |
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STPS640C 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() STPS640C Characteristics DocID3628 Rev 9 3/8 1.1 Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current(per diode) Figure 2: Average forward current versus ambient temperature (per diode, δ = 0.5) Figure 3: Normalized avalanche power derating versus pulse duration (Tj = 125 °C) Figure 4: Relative variation of thermal impedance junction to case versus pulse duration Figure 5: Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 6: Junction capacitance versus reverse voltage applied (typical values, per diode) |
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