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MPC7448 数据表(PDF) 9 Page - Freescale Semiconductor, Inc |
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MPC7448 数据表(HTML) 9 Page - Freescale Semiconductor, Inc |
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9 / 60 page ![]() MPC7448 RISC Microprocessor Hardware Specifications, Rev. 4 Freescale Semiconductor 9 General Parameters 4 General Parameters The following list summarizes the general parameters of the MPC7448: Technology 90 nm CMOS SOI, nine-layer metal Die size 8.0 mm × 7.3 mm Transistor count 90 million Logic design Mixed static and dynamic Packages Surface mount 360 ceramic ball grid array (HCTE) Surface mount 360 ceramic land grid array (HCTE) Surface mount 360 ceramic ball grid array with lead-free spheres (HCTE) Core power supply 1.30 V (1700 MHz device) 1.25 V (1600 MHz device) 1.20 V (1420 MHz device) 1.15 V (1000 MHz device) I/O power supply 1.5 V, 1.8 V, or 2.5 V 5 Electrical and Thermal Characteristics This section provides the AC and DC electrical specifications and thermal characteristics for the MPC7448. 5.1 DC Electrical Characteristics The tables in this section describe the MPC7448 DC electrical characteristics. Table 2 provides the absolute maximum ratings. See Section 9.2, “Power Supply Design and Sequencing,” for power sequencing requirements. Table 2. Absolute Maximum Ratings 1 Characteristic Symbol Maximum Value Unit Notes Core supply voltage VDD –0.3 to 1.4 V 2 PLL supply voltage AVDD –0.3 to 1.4 V 2 Processor bus supply voltage I/O Voltage Mode = 1.5 V OVDD –0.3 to 1.8 V 3 I/O Voltage Mode = 1.8 V –0.3 to 2.2 3 I/O Voltage Mode = 2.5 V –0.3 to 3.0 3 Input voltage Processor bus Vin –0.3 to OVDD + 0.3 V 4 JTAG signals Vin –0.3 to OVDD + 0.3 V Storage temperature range Tstg – 55 to 150 •C C Notes: 1. Functional and tested operating conditions are given in Table 4. Absolute maximum ratings are stress ratings only and functional operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause permanent damage to the device. 2. See Section 9.2, “Power Supply Design and Sequencing” for power sequencing requirements. 3. Bus must be configured in the corresponding I/O voltage mode; see Table 3. 4. Caution: Vin must not exceed OVDD by more than 0.3 V at any time including during power-on reset except as allowed by the overshoot specifications. Vin may overshoot/undershoot to a voltage and for a maximum duration as shown in Figure 2. |
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