Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Input Voltage

15V

PGOOD Pin Voltage

15V

Feedback Pin Voltage

−0.4V

≤ V

FB

≤ 5V

Power Dissipation (T

(Note 2)

893 mW

Junction Temperature

Range

−40˚C

≤ T

J

≤ +125˚C

Storage Temperature Range

−65˚C to +150˚C

Lead Temperature

M Package

Vapor Phase (60 sec.)

215˚C

Infrared (15 sec.)

220˚C

Maximum Junction Temperature

150˚C

ESD Susceptibility

Human Body Model (Note 3)

1 kV

Operating Ratings (Note 1)

Supply Voltage

4V

≤ V

IN

≤ 14V

Electrical Characteristics

Specifications with standard typeface are for T

Range.V

Symbol

Parameter

Conditions

Typical

(Note 5)

Limit

(Note 4)

Units

V

FB

Feedback Voltage

I

1.238

1.200

1.263

V

V(min)

V(max)

V

OUT

Output Voltage Line

Regulation

V

I

0.2

%

Output Voltage Load

Regulation

I

V

1.3

%

Output Voltage Load

Regulation

I

V

0.3

%

V

INUV

V

Threshold Voltage

Rising Edge

3.8

3.95

V

V(max)

V

UV_HYST

Hysteresis for the Input

Undervoltage Lockout

210

mV

I

CL

Switch Current Limit

V

V

2.0

1.55

2.60

A

A(min)

A(max)

I

SM

Sleep Mode Threshold

Current

V

100

mA

V

HYST

Sleep Mode Feedback

Voltage Hysteresis

24

mV

I

Q

Quiescent Current

1.7

2.0

mA

mA(max)

I

QSD

Quiescent Current in

Shutdown Mode

Shutdown Pin Pulled Low

7

12/20

µA

µA(max)

R

DS(ON)

High-Side or Low-Side

MOSFET ON Resistance

I

75

130

m

Ω

m

Ω (max)

R

SW(ON)

High-Side or Low-Side

Switch On Resistance

(MOSFET ON Resistance +

Bonding Wire Resitstance)

I

110

m

Ω

I

L

Switch Leakage

Current — High Side

130

nA

Switch Leakge

Current — Low Side

130

nA

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