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GD32H757VMT7 数据表(PDF) 150 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32H757VMT7 数据表(HTML) 150 Page - GigaDevice Semiconductor (Beijing) Inc. |
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150 / 151 page ![]() GD32H757xx Datasheet 149 Revision No. Description Date 1.5 1. Add GD32H757VMT7 chip model. 2. Add electrical characteristics for GD32H757VMT7. 3. Update ESD and EFT performance parameters for the LQFP176 package. 4. Update the Figure 4-10. OSPI timing diagram - SDR mode. 5. Update the Table 4-2. Absolute maximum ratings. 6. Update the Table 4-3. DC operating conditions. 7. Add the Figure 4-1. Bypass Mode Power-up and Power- down Timing Diagram. Nov.6, 2024 1.6 1. Delete the parameter of MODE2 and MODE3 in Table 4‑10. EMI characteristics(1). 2. Update the Table 4-34. 14-bit ADC accuracy(1)(2)(3). 3. Update the Table 4-22. Low speed internal clock (IRC32K) characteristics. 4. Add Table 4-12. Latch-up characteristics(1). Dec.4, 2024 |
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