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GD32H757VMT7 数据表(PDF) 97 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32H757VMT7 数据表(HTML) 97 Page - GigaDevice Semiconductor (Beijing) Inc. |
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97 / 151 page ![]() GD32H757xx Datasheet 96 characteristics(4) Symbol Parameter Conditions Min Typ Max Unit fHXTAL(1) Crystal or ceramic frequency 1.71 V ≤ VDD ≤ 3.6 V 4 25 50 MHz RF(2) Feedback resistor VDD = 3.3 V — 400 — k Ω CHXTAL(2) (3) Recommended matching capacitance on OSCIN and OSCOUT — — 20 30 pF DutyHXTAL(2) Crystal or ceramic duty cycle — 30 50 70 % gm(2) Oscillator transconductance Startup — 27 — mA/V IDD(HXTAL) (1) Crystal or ceramic operating current HXTAL = 25 MHz — 0.58 — mA tST(HXTAL)(1) Crystal or ceramic startup time HXTAL = 25 MHz — 334 — μs (1) Value guaranteed by characterization, not 100% tested in production. (2) Value guaranteed by design, not 100% tested in production. (3) CHXTAL1 = CHXTAL2 = 2*(CLOAD - CS), For CHXTAL1 and CHXTAL2, it is recommended matching capacitance on OSCIN and OSCOUT. For CLOAD, it is crystal/ceramic load capacitance, provided by the crystal or ceramic manufacturer. For CS, it is PCB and MCU pin stray capacitance. (4) More details about gm could be found in AN052 GD32 MCU Resonator-Based Clock Circuits. Table 4-16. High speed external clock characteristics (HXTAL in bypass mode) Symbol Parameter Conditions Min Typ Max Unit fHXTAL_ext(1) External clock source or oscillator frequency 1.71 V ≤ VDD ≤ 3.6 V 1 — 50 MHz VHXTALH(2) OSCIN input pin high level voltage VDD = 3.3 V 0.7 VDD — VDD V VHXTALL(2) OSCIN input pin low level voltage VSS — 0.3 VDD V tH/L(HXTAL) (2) OSCIN high or low time — 5 — — ns tR/F(HXTAL) (2) OSCIN rise or fall time — — — 10 ns DutyHXTAL (2) Duty cycle — 40 — 60 % (1) Value guaranteed by characterization, not 100% tested in production. (2) Value guaranteed by design, not 100% tested in production. Table 4-17. Low speed external clock (LXTAL) generated from a crystal/ceramic |
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