AP4800AGM_07 datasheet(1/5 Pages) A-POWER

部件名	AP4800AGM

功能描述	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	A-POWER [Advanced Power Electronics Corp.]

网页	http://www.a-power.com.tw

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1 / 5 page

Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Simple Drive Requirement

BVDSS

30V

▼ Low On-resistance

RDS(ON)

18mΩ

▼ Fast Switching Characteristic

ID

9.6A

Description

Absolute Maximum Ratings

Symbol

Units

VDS

V

VGS

V

ID@TA=25℃

A

ID@TA=70℃

A

IDM

A

PD@TA=25℃

W

W/℃

TSTG

℃

TJ

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

50

℃/W

Data and specifications subject to change without notice

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Linear Derating Factor

0.02

Storage Temperature Range

2.5

-55 to 150

Continuous Drain Current

3

7.7

Pulsed Drain Current

1

40

30

±20

9.6

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

AP4800AGM

Rating

RoHS-compliant Product

200712245

1

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

S

G

D

SO-8

G

D

S

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Advanced Power Electron...	AP4800AGM-HF	99Kb / 4P	Simple Drive Requirement, Low On-resistance
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