Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

30

-

-

V

Static Drain-Source On-Resistance

2

-

13

18

mΩ

-

21

28

mΩ

-

-

40

mΩ

Gate Threshold Voltage

1

-

3

V

Forward Transconductance

-

9

-

S

Drain-Source Leakage Current

-

-

1

uA

-

-

25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

12

18

nC

Gate-Source Charge

-

2

-

nC

Gate-Drain ("Miller") Charge

-

7

-

nC

Turn-on Delay Time

2

-

7

-

ns

Rise Time

-

7

-

ns

Turn-off Delay Time

-

22

-

ns

Fall Time

-7

-

ns

Input Capacitance

-

710

1350

pF

Output Capacitance

-

155

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

145

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward On Voltage

2

-

-

1.2

V

t

rr

Reverse Recovery Time

2

-

24

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

14

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

AP4800AGM

3.Surface mounted on 1 in

2

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT