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STM32L4P5CEU6P 数据表(PDF) 172 Page - STMicroelectronics

部件名 STM32L4P5CEU6P
功能描述  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS
PDF  311 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L4P5CEU6P 数据表(HTML) 172 Page - STMicroelectronics

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IDD
(Standby with
RTC)
Supply current in Standby
mode (backup registers
retained),
RTC enabled
RTC clocked by
LSE bypassed at
32768 Hz
ENULP = 1
LPCAL = 1
LSESYSDIS =1
1.8 V
84
370
-
-
-
-
-
-
-
-
nA
2.4 V
135
515
-
-
-
-
-
-
-
-
3 V
195
690
-
-
-
-
-
-
-
-
3.6 V
285
940
-
-
-
-
-
-
-
-
RTC clocked by
LSE quartz(2) in
Low-drive mode
1.8 V
560
810
2200
5350 13500
-
-
-
-
-
2.4 V
755
1050
2650
6300 15500
-
-
-
-
-
3 V
1000
1350
3200
7550 18500
-
-
-
-
-
3.6 V 1300
1750
4050
9250 22000
-
-
-
-
-
RTC clocked by
LSE quartz(2) in
Low-drive mode
ENULP=1
LPCAL = 1
LSESYSDIS =1
1.8 V
190
470
-
-
-
-
-
-
-
-
2.4 V
230
595
-
-
-
-
-
-
-
-
3 V
280
765
-
-
-
-
-
-
-
-
3.6 V
380
1000
-
-
-
-
-
-
-
-
IDD
(SRAM2
4 KBytes)(3)
Supply current in Standby
mode when 4 Kbytes of
SRAM2 are retained
-
1.8 V
200
-
-
-
-
-
-
-
-
-
2.4 V
210
-
-
-
-
-
-
-
-
-
3 V
230
-
-
-
-
-
-
-
-
-
3.6 V
265
-
-
-
-
-
-
-
-
-
IDD
(SRAM2
64 Kbytes)(3)
Supply current in Standby
mode when the full 64 Kbytes
of SRAM2 are retained
-
1.8 V
529
-
-
-
-
-
-
-
-
-
2.4 V
540
-
-
-
-
-
-
-
-
-
3 V
556
-
-
-
-
-
-
-
-
-
3.6 V
600
-
-
-
-
-
-
-
-
-
IDD (wakeup
from Standby)
Supply current during wakeup
from Standby mode
Wakeup clock is
MSI = 4 MHz(4)
3 V
1.52
-
-
-
-
-
-
-
-
-
mA
1. Guaranteed by characterization results, unless otherwise specified.
Table 48. Current consumption in Standby mode (continued)
Symbol
Parameter
Conditions
TYP
MAX(1)
Unit
-
VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C



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