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STM32L4P5CEU6P 数据表(PDF) 173 Page - STMicroelectronics |
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STM32L4P5CEU6P 数据表(HTML) 173 Page - STMicroelectronics |
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173 / 311 page ![]() 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 3. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: I IDD_ALL(Standby + RTC) + IDD_ALL(SRAM2). 4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings. Table 49. Current consumption in Shutdown mode Symbol Parameter Conditions TYP MAX(1) Unit - VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C IDD (Shutdown) Supply current in Shutdown mode (backup registers retained) RTC disabled - 1.8 V 22 155 985 3100 9400 80 358.3 2190 6643 18540 nA 2.4 V 31 190 1150 3600 11000 126 445.2 2533 7530 20760 3 V 44 240 1450 4400 13000 152 527.2 2900 8517 23240 3.6 V 74 340 1900 5650 16500 199 653.7 3410 9798 26260 IDD (Shutdown with RTC) Supply current in Shutdown mode (backup registers retained) RTC enabled RTC clocked by LSE bypassed at 32768 Hz 1.8 V 365 505 1350 3450 9800 ----- 2.4 V 565 745 1750 4200 11500 ----- 3 V 815 1050 2250 5250 14000 ----- 3.6 V 1100 1400 2950 6700 17500 ----- RTC clocked by LSE quartz(2) in Low-drive mode 1.8 V 475 640 1550 3800 10000 ----- 2.4 V 665 860 1900 4550 11500 ----- 3 V 905 1150 2450 5650 14000 ----- 3.6 V 1200 1500 3200 7200 17500 ----- RTC clocked by LSE quartz(2) in Low-drive mode LPCAL = 1 LSESYSDIS =1 1.8 V 180 - - - - ----- 2.4 V 190 - - - - ----- 3 V 229 - - - - ----- 3.6 V 293 - - - - ----- IDD (wakeup from Shutdown) Supply current during wakeup from Shutdown mode Wakeup clock is MSI = 4 MHz(3) 3 V 0.538 - - - - ----- mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. |
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