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MP9989GS 数据表(PDF) 4 Page - Monolithic Power Systems

部件名 MP9989GS
功能描述  CCM/DCM Flyback Ideal Diode with Integrated 100V/10mΩ MOSFET and No Need for Auxiliary Winding
PDF  15 Pages
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制造商  MPS [Monolithic Power Systems]
网页  http://www.monolithicpower.com
标志 MPS - Monolithic Power Systems

MP9989GS 数据表(HTML) 4 Page - Monolithic Power Systems

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MP9989
– FAST TURN-OFF INTELLIGENT RECTIFIER
MP9989 Rev. 1.1
www.MonolithicPower.com
4
8/27/2020
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2020 MPS. All Rights Reserved.
PIN FUNCTIONS
Pin #
SOIC-8
Pin #
QFN4x5-8
Name
Description
1
1
VDD
Linear regulator output. VDD is the supply of the MP9989.
2
2
SENSE
MOSFET drain voltage sensing. SENSE is also used as the linear
regulator input.
3, 4
3, 4
VS
MOSFET source. VS is also used as a reference for VDD.
5, 6, 7, 8
5, 6, 7, 8
VD
MOSFET drain.
ABSOLUTE MAXIMUM RATINGS (2)
VDD to VS ................................... -0.3V to +14V
VD to VS.................................... -1.5V to +100V
SENSE to VS................................ -1V to +180V
Continuous drain current (TC = 25°C)
SOIC-8 .....................................................14.9A
QFN4x5-8 .................................................28.1A
Continuous drain current (TC = 100°C)
SOIC-8 .....................................................9.42A
QFN4x5-8 .................................................17.8A
Pulsed drain current (3)
SOIC-8 ........................................................50A
QFN4x5-8 ....................................................94A
Maximum power dissipation (4)
SOIC-8 ......................................................1.7W
QFN
4x5-8 ................................................ 3.1W
Junction temperature ............................... 150°C
Lead temperature (solder) ....................... 260°C
Storage temperature ............... -55°C to +150°C
ESD Rating
Human-body model (HBM) ....................±1200V
Charged device model (CDM)................±2000V
Recommended Operation Conditions (5)
VDD to VS ...................................... 4.5V to 13V
Operating junction temp (TJ) .... -40°C to +125°C
Thermal Resistance (6)
θJA
θJC
SOIC-8 ................................... 70 ...... 32...
C/W
QFN4x5-8 .............................. 40 ....... 9....
C/W
Notes:
2)
Exceeding these ratings may damage the device.
3)
Repetitive rating: Pulse width = 100µs, duty cycle limited by
maximum junction temperature.
4)
TA = +25°C. The maximum allowable power dissipation is a
function of the maximum junction temperature TJ (MAX), the
junction-to-
ambient thermal resistance θ
JA, and the ambient
temperature TA. The maximum allowable continuous power
dissipation at any ambient temperature is calculated by PD
(MAX) = (TJ (MAX) - TA) / θJA. Exceeding the maximum
allowable power dissipation produces an excessive die
temperature, causing the regulator to go into thermal
shutdown. Internal thermal shutdown circuitry protects the
device from permanent damage.
5)
The device is not guaranteed to function outside of its
operating conditions.
6)
Measured on JESD51-7, 4-layer PCB.



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