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LCP150S 数据表(PDF) 3 Page - STMicroelectronics

部件名 LCP150S
功能描述  PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

LCP150S 数据表(HTML) 3 Page - STMicroelectronics

  LCP150S Datasheet HTML 1Page - STMicroelectronics LCP150S Datasheet HTML 2Page - STMicroelectronics LCP150S Datasheet HTML 3Page - STMicroelectronics LCP150S Datasheet HTML 4Page - STMicroelectronics LCP150S Datasheet HTML 5Page - STMicroelectronics LCP150S Datasheet HTML 6Page - STMicroelectronics  
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background image
I
IF
VSGL
VR
IR
VF
VGL
Ipp
IH
Symbol
Parameter
IGT
Gate Trigger Current
IH
Holding Current
IR
Reverse Leakage Current LINE/GND
IRG
Reverse Leakage Current GATE/LINE
VR
Reverse Voltage LINE/GND
VF
Forward Voltage LINE/GND
VGT
Gate Trigger Voltage
VFP
Peak Forward Voltage LINE/GND
VSGL
Dynamic Switching Voltage
GND/LINE
Vgate
GATE/GND Voltage
VLG
LINE/GND Voltage
C
Off State Capacitance LINE/GND
Symbol
Test Conditions
Max.
Unit
VF
Square pulse, Tp = 500
µs, IF =5 A
3
V
VFP
Ipp = 40 A, 10/1000
µs.
15
V
1 - PARAMETERS RELATED TO THE DIODE LINE/GND
Symbol
Tests Conditions
Min.
Max.
Unit
IGT
VGND/LINE = -48 V
0.2
15
mA
IH
VGATE= -48 V
Note 2
150
mA
VGT
at IGT
2.5
V
IRG
Tc = 25
°CVRG = -75 V
Tc = 70
°CVRG = -75 V
5
50
µA
µA
VSGL
VGATE= -48 V
Note 2
- 63
V
2 - PARAMETERS RELATED TO PROTECTION THYRISTOR
Symbol
Tests Conditions
Min.
Max.
Unit
IR
Tc = 25
°C-1 < VGL < -Vbat VR = - 85 V
Tc = 70
°C-1 < VGL < -Vbat VR = - 85 V
5
50
µA
µA
CVR = - 3 V
F < 1MHz
VR = - 48 V
F < 1MHz
150
80
pF
pF
3 - PARAMETERS RELATIVE TO DIODE AND PROTECTION THYRISTOR
Note 2 : See test circuit for IH and VSGL.
ELECTRICAL CHARACTERITICS (Tamb =25
°C, unless otherwise specified)
®
LCP150S
3/6



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