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LET9060C 数据表(PDF) 1 Page - STMicroelectronics |
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LET9060C 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() 1/5 PRELIMINARY DATA November, 4 2002 LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN • ESD PROTECTION DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and reliability of the ST latest LDMOS technology. Its superior performances make it an ideal solution for base station applications. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source M243 epoxy sealed ORDER CODE LET9060C BRANDING LET9060C ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V ID Drain Current 7 A PDISS Power Dissipation (@ Tc = 70°C) 118 W Tj Max. Operating Junction Temperature 200 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.1 °C/W |
类似零件编号 - LET9060C |
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类似说明 - LET9060C |
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