LET9060C datasheet(2/5 Pages) STMICROELECTRONICS

部件名	LET9060C

功能描述	RF POWER TRANSISTORS Ldmos Enhanced Technology

PDF	5 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 5 page

LET9060C

2/5

ELECTRICAL SPECIFICATION (TCASE = 25°C)

STATIC

DYNAMIC

IMPEDANCE DATA

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

VGS = 0 V

IDS = 1 mA

IDSS

VGS = 0 V

VDS = 28 V

µA

IGSS

VGS = 5 V

VDS = 0 V

µA

VGS(Q)

VDS = 28 V

ID = 100 mA

2.0

5.0

VDS(ON)

VGS = 10 V

ID = 3 A

0.7

0.8

GFS

VDS = 10 V

ID = 3 A

2.3

mho

CISS

VGS = 0 V

VDS = 28 V

f = 1 MHz

69.5

COSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

1.6

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

P1dB

VDD = 26 V

IDQ = 250 mA

f = 945 MHz

VDD = 26 V

IDQ = 250 mA

POUT = 60 W

f = 945 MHz

17.3

ηD

VDD = 26 V

IDQ = 250 mA

POUT = 60 W

f = 945 MHz

Load

mismatch

VDD = 26 V

IDQ = 250 mA

POUT = 60 W

f = 945 MHz

ALL PHASE ANGLES

5:1

VSWR

FREQ.

ZIN (Ω)

ZDL(Ω)

925 MHz

TBD

945 MHz

TBD

960 MHz

TBD

Typical Input

Impedance

Typical Drain

Load Impedance

Zin

ZDL

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