Characteristics

STPS30L60C

2/11

1

Characteristics

When the diodes 1 and 2 are used simultaneously :

To evaluate the conduction losses use the following equation :

2

(RMS)

Table 1.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

60

V

30

A

Average forward

current

TO-220AB

δ = 0.5

Per diode

Per device

15

30

A

TO-220FPAB

δ = 0.5

Per diode

Per device

15

30

Surge non repetitive forward current

tp = 10 ms Sinusoidal

230

A

Repetitive peak reverse current

tp = 2 µs square F = 1 kHz

2

A

Repetitive peak avalanche power

7800

W

Storage temperature range

-65 to + 175

° C

1.

condition to avoid thermal runaway condition for a diode on its own heatsink

150

° C

dV/dt

Critical rate of rise reverse voltage

10000

V/µs

Table 2.

Thermal resistances

Symbol

Parameter

Value

Unit

Junction to case

TO-247

Per diode

1.5

°C/W

Total

0.8

TO-220FPAB

Per diode

4.7

Total

3.95

Coupling

0.1

TO-220FPAB

3.2

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test : tp = 380 µs,

δ < 2%

Reverse leakage current

480

77

130

mA

(1)

Forward voltage drop

0.6

V

0.5

0.56

0.75

0.65

0.7

dPtot

dTj

---------------

1

Rth j

a

–

()

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