Characteristics

STPS30L60C

4/11

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220AB, TO-247,

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

th(j-c)

t (s)

p

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

δ=0.1

δ=0.2

δ=0.5

Single pulse

T

tp

TO-220FPAB

Z/R

th(j-c)

th(j-c)

t (s)

p

Figure 9.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

0

5

10 15 20 25 30 35 40 45 50 55 60

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

I (mA)

R

Tj=125°C

Tj=25°C

Tj=150°C

Tj=100°C

Tj=75°C

Tj=50°C

V (V)

R

1

10

100

0.1

0.2

0.5

1.0

2.0

C(nF)

F=1MHz

Tj=25°C

VR(V)

Figure 11.

Forward voltage drop versus

forward current (maximum values,

per diode)

Figure 12.

Thermal resistance junction to

ambient versus copper surface

circuit board FR4, copper

thickness: 35 µm)

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

1

10

100

200

I

(A)

FM

Tj=25°C

Tj=125°C

Typical values

Tj=150°C

V

(V)

FM

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

S(cm²)

R

(°C/W)

th(j-a)