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STM32L462CEU6 数据表(PDF) 130 Page - STMicroelectronics |
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STM32L462CEU6 数据表(HTML) 130 Page - STMicroelectronics |
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130 / 198 page ![]() Electrical characteristics STM32L462CE STM32L462RE STM32L462VE 130/198 DocID029969 Rev 1 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 24 for standard I/Os, and in Figure 24 for 5 V tolerant I/Os. Figure 24. I/O input characteristics Output driving current The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or source up to ± 20 mA (with a relaxed VOL/VOH). In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in Section 6.2: • The sum of the currents sourced by all the I/Os on VDDIOx, plus the maximum consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating ΣIVDD (see Table 17: Voltage characteristics). • The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of the MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS (see 2. Tested in production. 3. Guaranteed by design. 4. Max(VDDXXX) is the maximum value of all the I/O supplies. Refer to Table: Legend/Abbreviations used in the pinout table. 5. All TX_xx IO except FT_u and PC3. 6. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula: ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max). 7. To sustain a voltage higher than MIN(VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must be disabled. 8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). |
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