IRFZ24VPBF datasheet(7/9 Pages) IRF

部件名	IRFZ24VPBF

功能描述	HEXFET짰 Power MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

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7 / 9 page

IRFZ24VPbF

www.irf.com

Peak Diode Recovery dv/dt Test Circuit

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[

] ***

Fig 14. For N-channel HEXFET® power MOSFETs

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