IRFZ24VPBF datasheet(1/9 Pages) IRF

部件名	IRFZ24VPBF

功能描述	HEXFET짰 Power MOSFET

PDF	9 Pages

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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IRFZ24VPbF

HEXFET® Power MOSFET

8/3/04

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

3.4

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

VDSS = 60V

RDS(on) = 60mΩ

ID = 17A

S

D

G

TO-220AB

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Optimized for SMPS Applications

Description

PD - 95623

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

17

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

12

A

IDM

Pulsed Drain Current

68

PD @TC = 25°C

Power Dissipation

44

W

Linear Derating Factor

0.29

W/°C

VGS

Gate-to-Source Voltage

± 20

V

IAR

Avalanche Current

17

A

EAR

Repetitive Avalanche Energy

4.4

mJ

dv/dt

Peak Diode Recovery dv/dt

4.2

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

l Lead-Free

类似零件编号 - IRFZ24VPBF

制造商	部件名	数据表	功能描述
International Rectifier	IRFZ24V	200Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A)
	IRFZ24VL	124Kb / 10P	HEXFET Power MOSFET
	IRFZ24VLPBF	267Kb / 10P	HEXFET Power MOSFET
	IRFZ24VS	124Kb / 10P	HEXFET Power MOSFET
	IRFZ24VSPBF	267Kb / 10P	HEXFET Power MOSFET

More results

类似说明 - IRFZ24VPBF

制造商	部件名	数据表	功能描述
International Rectifier	IRFBA1405PPBF	153Kb / 10P	HEXFET짰 Power MOSFET
	IRFBC40SPBF	360Kb / 10P	HEXFET짰 Power MOSFET
	IRFR3707PBF	221Kb / 9P	HEXFET짰 Power MOSFET
	IRF520VPBF	150Kb / 8P	HEXFET짰 Power MOSFET
	IRF1010EPBF	231Kb / 8P	HEXFET짰 Power MOSFET
	IRFZ44EPBF	147Kb / 8P	HEXFET짰 Power MOSFET
	IRLIZ24NPBF	843Kb / 8P	HEXFET짰 Power MOSFET
	IRLZ44NSPBF	336Kb / 10P	HEXFET짰 Power MOSFET
	IRF9510PBF	1Mb / 8P	HEXFET짰 Power MOSFET
	IRF820PBF	3Mb / 7P	HEXFET짰 Power MOSFET

More results

IRFZ24VPBF 数据表(PDF) 1 Page - International Rectifier

IRFZ24VPBF 数据表(HTML) 1 Page - International Rectifier

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IRFZ24VPBF 数据表(PDF) 1 Page - International Rectifier

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