AI00784B

11

A0-A10

Q0-Q7

VCC

M2716

G

EP

VSS

8

VPP

Figure 1. Logic Diagram

M2716

NMOS 16K (2K x 8) UV EPROM

2048 x 8 ORGANIZATION

525mW Max ACTIVE POWER, 132mW Max

STANDBY POWER

ACCESS TIME:

– M2716-1 is 350ns

– M2716 is 450ns

SINGLE 5V SUPPLY VOLTAGE

STATIC-NO CLOCKS REQUIRED

INPUTS and OUTPUTS TTL COMPATIBLE

DURING BOTH READ and PROGRAM

MODES

THREE-STATE OUTPUT with TIED-OR-

CAPABILITY

EXTENDED TEMPERATURE RANGE

PROGRAMMING VOLTAGE: 25V

DESCRIPTION

The M2716 is a 16,384 bit UV erasable and elec-

trically programmable memory EPROM, ideally

suited for applications where fast turn around and

pattern experimentation are important require-

ments.

The M2716 is housed in a 24 pin Window Ceramic

Frit-Seal Dual-in-Line package. The transparent lid

allows the user to expose the chip to ultraviolet light

to erase the bit pattern. A new pattern can then be

written to the device by following the programming

procedure.

A0 - A10

Address Inputs

Q0 - Q7

Data Outputs

EP

Chip Enable / Program

G

Output Enable

Program Supply

Supply Voltage

Ground

Table 1. Signal Names

1

24

FDIP24W (F)

July 1994

1/9