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Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-60

---

---

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.021

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-1.5A

---

130

185

mΩ

VGS=-4.5V , ID=-1A

---

158

200

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

---

-2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

4.08

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-48V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=-48V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-1.5A

---

5.9

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V , ID=-

1.5A

---

4.6

---

nC

Qgs

Gate-Source Charge

---

1.4

---

Qgd

Gate-Drain Charge

---

1.62

---

Td(on)

Turn-On Delay Time

VDS=-15V , VGS=-10V , RG=3.3

Ω,

ID=-1A

---

17.4

---

ns

Tr

Rise Time

---

5.4

---

Td(off)

Turn-Off Delay Time

---

37.2

---

Tf

Fall Time

---

2.4

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

531

---

pF

Coss

Output Capacitance

---

59

---

Crss

Reverse Transfer Capacitance

---

38

---

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

-1.7

A

ISM

Pulsed Source Current2,4

---

---

-7

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1.2

V

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The power dissipation is limited by 150℃ junction temperature

4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

AP3P06AI

-60V P-Channel Enhancement Mode MOSFET

AP3P06AI Rve3.9