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AP3P06AI 数据表(PDF) 3 Page - A POWER MICROELECTRONICS |
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AP3P06AI 数据表(HTML) 3 Page - A POWER MICROELECTRONICS |
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3 / 9 page ![]() 臺灣永源微電子科技有限公司 0 1 2 3 4 5 6 7 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS , Drain-to-Source Voltage (V) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 0 2 4 6 0.0 0.4 0.8 1.2 VSD , Source-to-Drain Voltage (V) TJ=150℃ TJ=25℃ 0 2 4 6 8 10 0 2.5 5 7.5 10 QG , Total Gate Charge (nC) VDS=-20V ID=-1.5A 0 0.5 1 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 120 130 140 150 160 AP3P06AI -60V P-Channel Enhancement Mode MOSFET AP3P06AI Rve3.9 |
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