AP30P02DF

-20V P-Channel Enhancement Mode MOSFET

AP30P02DF RVE1.1

永源微電子科技有限公司

Description

The AP30P02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-30A

RDS(ON) ＜16mΩ @ VGS=-4.5V（Type：12mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30P02DF

PDFN3*3-8L

AP30P02DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ -4.5V1

-30

A

ID@TC=100℃

Continuous Drain Current, VGS @ -4.5V1

-18

A

IDM

Pulsed Drain Current2

-90

A

PD@TC=25℃

Total Power Dissipation3

3

W

PD@TC=70℃

Total Power Dissipation3

1.6

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

24

℃

/W