AP30P02DF

-20V P-Channel Enhancement Mode MOSFET

AP30P02DF RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250µA

-20

-

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS=±12V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ= 25°C

VDS=-20V, VGS=0V

-

-

-1

μA

Zero Gate Voltage Drain CurrentTJ= 100°C

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID=-250µA

-0.5

-0.65 -1.2

V

RDS(on)

Drain-Source On-Resistance4

VGS=-4.5V, ID=-8A

-

12

16

mΩ

VGS=-2.5V, ID=-6A

-

18

23

gfs

Forward Transconductance4

VDS=-4.5V, ID=-8A

-

36

-

S

Ciss

Input Capacitance

VDS=-10V, VGS= 0V, f =

1MHz

-

1630

-

pF

Coss

Output Capacitance

-

211

-

Crss

Reverse Transfer Capacitance

-

187

-

Rg

Gate Resistance

f=1MHz

-

10

-

Ω

Qg

Total Gate Charge

VGS=-4.5V, VDS=-10V,

ID=-8A

-

12

-

nC

Qgs

Gate-Source Charge

-

1.8

-

Qgd

Gate-Drain Charge

-

3.2

-

td(on)

Turn-On Delay Time

VGS=-4.5V, VDD=-10V,

RG=3Ω, ID=-8A

-

17

-

ns

tr

Rise Time

-

25.5

-

td(off)

Turn-Off Delay Time

-

32

-

tf

Fall Time

-

15

-

VSD

Diode Forward Voltage4

IS=-8A, VGS=0V

-

-

-1.2

V

IS

Continuous Source Current TA= 25°C

-

-

-9

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.