AP40G04GD

40V N+P-Channel Enhancement Mode MOSFET

AP40G04GD REV1.1

永源微電子科技有限公司

Description

The AP40G04GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS =40V ID =48A

RDS(ON) < 10mΩ @ VGS=10V （Type：8.0mΩ）

VDS = -40V ID =-43A

RDS(ON) < 18mΩ @ VGS=-10V （Type：13mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40G04GD

TO-252-4L

AP40G04GD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

40

-40

V

VGS

Gate-Source Voltage

±20

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

48

-43

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

37

-35

A

IDM

Pulsed Drain Current2

144

-129

A

EAS

Single Pulse Avalanche Energy3

128

185

mJ

IAS

Avalanche Current

16

-18

A

PD@TC=25℃

Total Power Dissipation4

48

51.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.3

℃

/W