AP40H02DF

20V N+N-Channel Enhancement Mode MOSFET

AP40H02DF RVE1.0

永源微電子科技有限公司

Description

The AP40H02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=20V ID=40A

RDS(ON) < 10.5mΩ @ VGS=4.5V （Type：8.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40H02DF

PDFN3*3-8L

AP40H02DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID@TA=25

℃

Continuous Drain Current, VGS @ 4.5V

40

A

ID@TA=70

℃

Continuous Drain Current, VGS @ 4.5V

20

A

IDM

Pulsed Drain Current note1

120

A

EAS

Single Pulsed Avalanche Energy note2

23

mJ

PD@TA=25

℃

Power Dissipation

20

W

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance, Junction to Case

3.5

℃/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃