AP40H02DF

20V N+N-Channel Enhancement Mode MOSFET

AP40H02DF RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

20

24

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

0.5

0.75

1.2

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS=4.5V, ID=15A

-

8.5

10.5

mΩ

VGS=2.5V, ID=10A

-

11.7

17.5

Ciss

Input Capacitance

VDS=10V, VGS=0V,

f=1.0MHz

-

1000

1500-

pF

Coss

Output Capacitance

-

182

-

pF

Crss

Reverse Transfer Capacitance

-

164

-

pF

Qg

Total Gate Charge

VDS=10V, ID=15A,

VGS=4.5V

-

15

-

nC

Qgs

Gate-Source Charge

-

2

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

5.2

-

nC

td(on)

Turn-on Delay Time

VDS=10V,

ID=15A, RGEN=3Ω,

VGS=4.5V

-

9

-

ns

tr

Turn-on Rise Time

-

25

-

ns

td(off)

Turn-off Delay Time

-

37

-

ns

tf

Turn-off Fall Time

-

14

-

ns

IS

Maximum Continuous Drain to Source Diode ForwardCurrent

-

-

30

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

120

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=30A

-

-

1.2

V

Notes:

1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2、The test condition is, VDD=10V, VG=4.5V, L=0.5mH, RG=25Ω, IAS=9.6A

3、The data tested by pulsed Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

4、The power dissipation is limited by 150℃ junction temperature