AP40N02DF datasheet(1/7 Pages) APME

部件名	AP40N02DF

功能描述	20V N-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP40N02DF

20V N-Channel Enhancement Mode MOSFET

AP40N02DF REV1.0

永源微電子科技有限公司

Description

The AP40N02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =40A

RDS(ON) < 9mΩ @ VGS=4.5V （Type：7.0mΩ）

Application

3.3V MCU Drive

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40N02DF

PDFN3X3-8L

AP40N02DF XXX YYYY

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 4.5V

40

A

ID@TA=70℃

Continuous Drain Current, VGS @ 4.5V

25

A

IDM

Pulsed Drain Current note1

110

A

IAS

Avalanche Current

38

A

EAS

Single Pulsed Avalanche Energy note2

130

mJ

PD@TA=25℃

Power Dissipation

37

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance, Junction to Case

4.8

℃

/W

类似零件编号 - AP40N02DF

制造商	部件名	数据表	功能描述
A POWER MICROELECTRONIC...	AP40N02NF	1Mb / 7P	20V N-Channel Enhancement Mode MOSFET REV1.0

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