AP40N03DF datasheet(1/7 Pages) APME

部件名	AP40N03DF

功能描述	30V N-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP40N03DF

30V N-Channel Enhancement Mode MOSFET

AP40N03DF REV1.1

永源微電子科技有限公司

Description

The AP40N03DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =40A

RDS(ON) < 17mΩ @ VGS=10V （Type：12.5mΩ）

Application

VBUS

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40N03DF

PDFN3*3-8L

AP40N03DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

40

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

18

A

IDM

Pulsed Drain Current2

160

A

EAS

Single Pulse Avalanche Energy3

18

mJ

IAS

Avalanche Current

18

A

PD@TC=25℃

Total Power Dissipation4

26

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

4.8

℃

/W

类似零件编号 - AP40N03DF

制造商	部件名	数据表	功能描述
Advanced Power Electron...	AP40N03GJ-HF	102Kb / 4P	Fast Switching Characteristic RoHS Compliant & Halogen-Free
Advanced Power Electron...	AP40N03GP	106Kb / 4P	Low Gate Charge Simple Drive Requirement
VBsemi Electronics Co.,...	AP40N03GP	982Kb / 7P	N-Channel 30-V (D-S) MOSFET
Advanced Power Electron...	AP40N03GP-HF	100Kb / 4P	Simple Drive Requirement
Advanced Power Electron...	AP40N03GP-HF	56Kb / 5P	Fast Switching Characteristic

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