AP40N03DF

30V N-Channel Enhancement Mode MOSFET

AP40N03DF REV1.1

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

-

-

1.0

µA

IGSS

Gate-Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250µA

1.2

1.7

2.2

V

RDS(ON)

Static Drain-Source ON-Resistance(4)

VGS=10V, ID=5.0A

-

12.5

17

mΩ

VGS=4.5V, ID=4.0A

-

20

25

mΩ

Ciss

Input Capacitance

VGS=0V, VDS=15V, f=1MHz

-

485

-

pF

Coss

Output Capacitance

-

69

-

pF

Crss

Reverse Transfer Capacitance

-

53

-

pF

Qg

Total Gate Charge

VGS=0 to 10V VDD=15V,

ID=5A

-

10

-

nC

Qgs

Gate Source Charge

-

2

-

nC

Qgd

Gate Drain("Miller") Charge

-

2

-

nC

td(on)

Turn-On DelayTime

VGS=10V, VDD=15V

ID=5A, RGEN=3Ω

-

4

-

ns

tr

Turn-On Rise Time

-

11

-

ns

td(off)

Turn-Off DelayTime

-

14

-

ns

tf

Turn-Off Fall Time

-

2

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

5.8

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

23

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS=5.8A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=5A,di/dt=100A/μs

-

7.5

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

2

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=10A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.