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M28C16B, M28C17B

Table 6A. Read Mode DC Characteristics for M28CxxB (5V range)

Note: 1. All inputs and outputs open circuit.

Table 6B. Read Mode DC Characteristics for M28CxxB-W (3V range)

Note: 1. All inputs and outputs open circuit.

Symbol

Parameter

Test Condition

Min.

Max.

Unit

Input Leakage Current

0V

10

µA

Output Leakage Current

0 V

10

µA

1

Supply Current (TTL inputs)

30

mA

Supply Current (CMOS inputs)

25

mA

1

Supply Current (Stand-by) TTL

1mA

1

Supply Current (Stand-by) CMOS

100

µA

Input Low Voltage

-0.3

0.8

V

Input High Voltage

2

V

Output Low Voltage

0.4

V

Output High Voltage

2.4

V

Symbol

Parameter

Test Condition

Min.

Max.

Unit

Input Leakage Current

0V

10

µA

Output Leakage Current

0V

10

µA

1

Supply Current (CMOS inputs)

8

mA

10

mA

1

Supply Current (Stand-by) CMOS

20

µA

Input Low Voltage

-0.3

0.6

V

Input High Voltage

2

V

Output Low Voltage

V

Output High Voltage

V

Table 10A). The DQ5 line is held low to show

when this timer is running (hence showing that the

device has received one write operation, and is

waiting for the next). The DQ5 line is held high

when the counter has overflowed (hence showing

that the device is now starting the internal write to

the memory array).