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TSX921 数据表(PDF) 5 Page - STMicroelectronics |
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TSX921 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 19 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit ∫en Low-frequency peak-to-peak input noise Bandwidth, f = 0.1 to 10 Hz 16 µVpp THD+N Total harmonic distortion + noise Follower configuration, fin = 1 kHz, RL = 100 kΩ, Vicm = (VCC -1.5 V)/2, BW = 22 kHz, Vout = 1 Vpp 0.004 % 1. Guaranteed by design Table 4. Electrical characteristics at VCC+ = 5 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25 ° C, and RL = 10 kΩ connected to VCC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Offset voltage T = 25 °C 3 mV -40 °C < T < 125 °C 5 ΔVio/ΔT Input offset voltage drift -40 °C < T < 125 °C 1 µV/°C ΔVio Long-term input offset voltage drift T = 25 °C (1) 5 nV/√month Iib Input bias current, Vout = VCC/2 T = 25 °C 1 100 (2) pA -40 °C < T < 125 °C 1 200 (2) Iio Input offset current, Vout = VCC/2 T = 25 °C 1 100 (2) -40 °C < T < 125 °C 1 200 (2) CMR1 Common mode rejection ratio, CMR = 20 log (ΔVic/ΔVio), Vic = -0.1 V to VCC - 1.5 V, Vout = VCC/2, RL > 1 MΩ T = 25 °C 66 84 dB -40 °C < T < 125 °C 63 CMR2 Common mode rejection ratio, CMR = 20 log (ΔVic/ΔVio), Vic = -0.1 V to VCC + 0.1 V, Vout = VCC/2, RL > 1 MΩ T = 25 °C 50 69 -40 °C < T < 125 °C 47 Avd Large signal voltage gain, Vout = 0.5 V to (VCC - 0.5 V), RL > 1 MΩ T = 25 °C 85 -40 °C < T < 125 °C 83 VOH High-level output voltage, VOH = VCC - Vout RL = 10 kΩ, T = 25 °C 70 mV RL = 10 kΩ, -40 °C < T < 125 °C 100 VOL Low-level output voltage RL = 10 kΩ, T = 25 °C 70 RL = 10 kΩ, -40 °C < T < 125 °C 100 Iout Isink Vout = VCC, T = 25 °C 11 14 mA Vout = VCC, -40 °C < T < 125 °C 8 Isource Vout = 0 V, T = 25 °C 9 12 Vout = 0 V, -40 °C < T < 125 °C 7 ICC Supply current, per channel, Vout = VCC/2, RL > 1 MΩ T = 25 °C 235 350 μA -40 °C < T < 125 °C 400 AC performance GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 700 850 kHz Fu Unity gain frequency 730 LMC7101 Electrical characteristics DS13567 - Rev 1 page 5/19 |
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