AP40N20MP

200V N-Channel Enhancement Mode MOSFET

AP40N20MP Rev1.0

臺灣永源微電子科技有限公司

Description

The AP40N20MP is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS =200V,ID =40A

RDS(ON) <80mΩ@ VGS=10V

Application

Power amplifier

motor drive

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40N20MP

TO-247-3 Plus

AP40N20MP XXX YYYY

600

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage

200

V

ID

Drain Current -continuous

40

A

IDM

Drain Current -pulse

120

A

VGSS

Gate-Source Voltage

±30

V

EAS

Single Pulsed Avalanche Energy

588

mJ

IAR

Avalanche Current

40

A

EAR

Repetitive Avalanche Current

15.8

mJ

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

PD TC=25

℃

Power Dissipation

158

W

TJ，TSTG

Operating and Storage Temperature Range

-55～+150

℃

TL

Maximum Lead Temperature for Soldering Purposes

300

℃

Rth(j-c)

Thermal Resistance, Junction to Case

0.79

℃/W

Rth(j-A)

Thermal Resistance, Junction to Ambient

62.5

℃/W