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AP40N20MP 数据表(PDF) 2 Page - A POWER MICROELECTRONICS

部件名 AP40N20MP
功能描述  200V N-Channel Enhancement Mode MOSFET
PDF  6 Pages
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制造商  APME [A POWER MICROELECTRONICS]
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标志 APME - A POWER MICROELECTRONICS

AP40N20MP 数据表(HTML) 2 Page - A POWER MICROELECTRONICS

  AP40N20MP Datasheet HTML 1Page - A POWER MICROELECTRONICS AP40N20MP Datasheet HTML 2Page - A POWER MICROELECTRONICS AP40N20MP Datasheet HTML 3Page - A POWER MICROELECTRONICS AP40N20MP Datasheet HTML 4Page - A POWER MICROELECTRONICS AP40N20MP Datasheet HTML 5Page - A POWER MICROELECTRONICS AP40N20MP Datasheet HTML 6Page - A POWER MICROELECTRONICS  
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AP40N20MP
200V N-Channel Enhancement Mode MOSFET
AP40N20MP Rev1.0
臺灣永源微電子科技有限公司
Electrical Characteristics Diagrams
Symbol
Parameter
Tests conditions
Min Typ Max Units
BVDSS
Drain-Source Voltage
ID=250μA, VGS=0V
200
-
-
V
ΔBVDSS /ΔTJ
Breakdown Voltage Temperature Coefficient
ID=250μA, referenced to 25
℃
-
0.19
-
V/
℃
IDSS
Zero Gate Voltage Drain Current
VDS=200V, VGS=0V, TC=25℃
-
-
1
μA
IGSSF
Gate-body leakage current, forward
VDS=0V, VGS =30V
-
-
100
nA
IGSSR
Gate-body leakage current, reverse
VDS=0V, VGS =-30V
-
-
-100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS , ID=250μA
2.0
-
4.0
V
RDS(ON)
Static Drain-Source On-Resistance
VGS =10V , ID=14.0A
-
60
80
mΩ
gfs
Forward Transconductance
VDS = 40V , ID=14.0A
-
24
-
S
Ciss
Input capacitance
VDS=25V, VGS =0V, f=1.0MHZ
-
2879 3742
pF
Coss
Output capacitance
-
362
470
pF
Crss
Reverse transfer capacitance
-
81
105
pF
td(on)
Turn-On delay time
VDD=100V,ID=28A,RG=25Ω VGS
=10V
（
note 4，5）
-
28
69
ns
tr
Turn-On rise time
-
251
494
ns
td(off)
Turn-Off delay time
-
309
617
ns
tf
Turn-Off Fall time
-
220
412
ns
Qg
Total Gate Charge
VDS =160V , ID=28A
VGS =10V（note 4，5）
-
103
136
nC
Qgs
Gate-Source charge
-
16
-
nC
Qgd
Gate-Drain charge
-
53
-
nC
IS
Maximum Continuous Drain-Source
Diode Forward Current
-
-
28
A
ISM
Maximum Pulsed Drain-Source Diode
Forward Current
-
-
112
A
VSD
Maximum Continuous Drain-Source
Diode Forward Current
VGS=0V, IS=28A
-
1.4
V
trr
Reverse recovery time
VGS=0V, IS=28A dIF/dt=100A/μs
(note 4)
218
ns
Qrr
Reverse recovery charge
1.91
μC
Notes:
1：Pulse width limited by maximum junction temperature
2：L=1.5mH, IAS=28A, VDD=50V, RG=25 Ω,Starting TJ=25℃
3：ISD ≤28A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃
4：Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％
5：Essentially independent of operating temperature



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