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AP70N04DF 数据表(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP70N04DF 数据表(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP70N04DF 40V N-Channel Enhancement Mode MOSFET AP70N04DF RVE1.1 永源微電子科技有限公司 Description The AP70N04DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =70A RDS(ON) < 7.0mΩ @ VGS=10V (Type:5.5mΩ) Application Wireless charging Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP70N04DF PDFN3*3-8L AP70N04DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 70 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 39 A IDM Pulsed Drain Current2 240 A EAS Single Pulse Avalanche Energy3 81 mJ IAS Avalanche Current 20 A PD@TC=25℃ Total Power Dissipation4 46 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient (Steady State)1 85 ℃ /W RθJC Thermal Resistance Junction-Case1 2.7 ℃ /W |
类似零件编号 - AP70N04DF |
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类似说明 - AP70N04DF |
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