AP70N04DF

40V N-Channel Enhancement Mode MOSFET

AP70N04DF RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Typ

Max

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID=250μA

40

47

-

V

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

1.2

1.7

2.5

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.034

---

V/

℃

RDS(on)

Static Drain-Source on-Resistance

VGS =10V, ID =30A

-

5.5

7.0

mΩ

VGS =4.5V, ID =20A

-

8.2

10

IDSS

Zero Gate Voltage Drain Current

VDS =40V, VGS = 0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS =0V,VGS = ±20V

-

-

±100

nA

Ciss

Input Capacitance

VDS = 20V, VGS =0V, f =

1.0MHz

-

2400

-

pF

Coss

Output Capacitance

-

192

-

pF

Crss

Reverse Transfer Capacitance

-

165

-

pF

Qg

Total Gate Charge

VDS =20V, ID =30A,

VGS =10V

-

37

-

nC

Qgs

Gate-Source Charge

-

6

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

7

-

nC

td(on)

Turn-on Delay Time

V DD=20V, ID =30A,

RL=1Ω, RGEN=3Ω,

VGS =10V

-

12

-

ns

tr

Turn-on Rise Time

-

12

-

ns

td(off)

Turn-off Delay Time

-

38

-

ns

tf

Turn-off Fall Time

-

9

-

ns

IS

Maximum Continuous Drain to Source Diode ForwardCurrent

-

-

60

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

240

A

VSD

Drain to Source Diode Forward Voltage

VGS =0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

TJ=25

℃,IF=20A,dI/dt=100

A/μs

-

22

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

11

-

nC

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.