AP75N02DF

20V N-Channel Enhancement Mode MOSFET

AP75N02DF REV1.0

永源微電子科技有限公司

Description

The AP75N02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 20V ID =75A

RDS(ON) < 3.7mΩ@ VGS=4.5V (Type：2.95mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP75N02DF

PDFN3X3-8L

AP75N02DF XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

75

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

49

A

IDM

Pulsed Drain Current note1

360

A

EAS

Single Pulsed Avalanche Energy note2

110

mJ

PD

Power Dissipation

81

W

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance, Junction to Case

1.85

℃/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

℃